p-doping of GaN by MOVPE

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Haffouz, S ^a   Beaumont, B ^a   Leroux, M ^a   Laugt, M ^a   Lorenzini, P ^a   Gibart, Pierre ^a   Hubert Pfalzgraf, L G ^b  

^a CRHEA CNRS   (France)

^b Valrose   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; DECOMPOSITION; DOPING (ADDITIVES); ELECTRON BEAMS; HEAT TREATMENT; INFRARED RADIATION; LASER BEAMS; LIGHT EMITTING DIODES; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY;

ELECTRICAL ACTIVITY; IR ABSORPTION; LOW ENERGY ELECTRON BEAM IRRADIATION (LEEBI);

GALLIUM NITRIDE;

EID: 4043052234     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001630     Document Type: Article

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