Current-driven magnetization reversal at extremely low threshold current density in (Ga,Mn)As-based double-barrier magnetic tunnel junctions

Applied Physics Letters

Volumn 92, Issue 8, 2008, Pages

  Watanabe, Maya ^a   Okabayashi, Jun ^a   Toyao, Hiroshi ^a   Yamaguchi, Takeshi ^a   Yoshino, Junji ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIZATION REVERSAL; SPIN POLARIZATION; THICKNESS MEASUREMENT; THRESHOLD CURRENT DENSITY; TORQUE;

MAGNETIC TUNNEL JUNCTIONS; SPIN TORQUE; SPIN-POLARIZED CURRENT;

SEMICONDUCTOR JUNCTIONS;

EID: 40049104204     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2841703     Document Type: Article

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