Quantitative model for data retention loss at NROM nitride charge trapping devices after program / erase cycling

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 78-80

  Tempel, G ^a   Hagenbeck, R ^a   Strassburg, M ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751050623     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629503     Document Type: Conference Paper

References (8)

1. B. Eitan et al., EDL-21(11), pp.543-545, 2000
2. M.Janai et al., TDMR 2004, pp.1-13
3. T.Wang et al., IEDM 2003
4. T.Mikolajick et al., NVSMWS 2004, pp.98-99
5. G. Ingrosso et al., ESSDERC, 2002, p. 187
6. J.F.Zhang et al., IEEE TED 47 (2000), p. 378
7. I.C.Chen et al., J.Appl.Phys 61, pp.4544, 1987
8. D. Ielmini et al., IRPS 2004