Trap distribution in TlInS2 layered crystals from thermally stimulated current measurements

Journal of the Korean Physical Society

Volumn 52, Issue 2, 2008, Pages 367-373

  Isik, M ^a   Goksen, K ^b,c   Gasanly, N M ^b   Ozkan, H ^b  

^a ATILIM UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^c YUZUNCU YIL UNIVERSITY   (Turkey)

Author keywords

Chalcogenides; Defects; Electrical properties; Semiconductors

Indexed keywords

EID: 40049091437     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.52.367     Document Type: Article

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