Investigation of carrier scattering mechanisms in TlInS2 single crystals by hall effect measurements

Crystal Research and Technology

Volumn 39, Issue 5, 2004, Pages 439-447

  Qasrawi, A F ^a   Gasanly, N M ^b  

^a ATILIM UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Conductivity; Coupling constant; Hall effect; Mobility; Phonon; Scattering; TlInS2

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRON SCATTERING; HALL EFFECT; HOLE MOBILITY; PHONONS; SINGLE CRYSTALS;

COUPLING CONSTANTS; ELECTRON-PHONON INTERACTIONS; TEMPERATURE DEPENDENCE; TLINS2;

THALLIUM COMPOUNDS;

EID: 2942572867     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310208     Document Type: Article

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