|
Volumn 417, Issue 1-2, 2006, Pages 23-28
|
Determination of trapping center parameters of Tl2InGaS4-layered crystals by thermally stimulated current measurements
|
Author keywords
Electronic transport; Impurities in semiconductors; Semiconductors
|
Indexed keywords
ACTIVATION ENERGY;
HEATING;
HOLE TRAPS;
IMPURITIES;
SEMICONDUCTOR MATERIALS;
THALLIUM COMPOUNDS;
ELECTRONIC TRANSPORT;
HEATING RATES;
HOLE TRAPPING CENTERS;
IMPURITIES IN SEMICONDUCTORS;
SINGLE CRYSTALS;
|
EID: 33646872181
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2005.09.024 Document Type: Article |
Times cited : (14)
|
References (18)
|