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Volumn 417, Issue 1-2, 2006, Pages 23-28

Determination of trapping center parameters of Tl2InGaS4-layered crystals by thermally stimulated current measurements

Author keywords

Electronic transport; Impurities in semiconductors; Semiconductors

Indexed keywords

ACTIVATION ENERGY; HEATING; HOLE TRAPS; IMPURITIES; SEMICONDUCTOR MATERIALS; THALLIUM COMPOUNDS;

EID: 33646872181     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2005.09.024     Document Type: Article
Times cited : (14)

References (18)
  • 1
    • 0000917167 scopus 로고
    • (and references therein)
    • Yee K.A., and Albright A. J. Am. Chem. Soc. 113 (1991) 6474-6478 (and references therein)
    • (1991) J. Am. Chem. Soc. , vol.113 , pp. 6474-6478
    • Yee, K.A.1    Albright, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.