Trap levels in layered semiconductor TlInS1.9Se0.1

Physica Status Solidi (A) Applied Research

Volumn 196, Issue 2, 2003, Pages 422-428

  Ozdemir S ^a   Gasanly, N M ^a   Bucurgat, M ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; ENERGY GAP; FERROELECTRICITY; PHASE TRANSITIONS; SINGLE CRYSTALS; THERMAL EFFECTS;

CAPTURE CROSS SECTION; CHARGE TRAPPING; LAYERED SEMICONDUCTOR; TEMPERATURE-DEPENDENT FREQUENCY FACTOR; THERMALLY STIMULATED CURRENT TECHNIQUE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0038784405     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306448     Document Type: Article

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