Effects of deposition temperature on the properties of fluorinated amorphous carbon films

Plasma Science and Technology

Volumn 5, Issue 5, 2003, Pages 1977-1982

  Chen, Lingling ^a   Cheng, Shanhua ^a   Xin, Yu ^a   Ning, Zaoyuan ^a   Xu, Shenghua ^a   Chen, Jun ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

Deposition temperature; Fluorinated amorphous carbon film; FTIR; Optical band gap

Indexed keywords

EID: 39849095863     PISSN: 10090630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-0630/5/5/008     Document Type: Article

References (15)

1. Yi Jeong W, Lee Young H, Farouk Bakhtier. Thin Solid Films, 2000, 374: 103-108
2. Murarka S P. Solid State Technol, 1996, 3: 83
3. Laxman R K. Semicond. Int., 1995, 5: 71
4. Endo K, Tatsumi T. J. Appl. Phys., 1995, 78: 1370
5. Endo K, Tatsumi T, Matsubara Y, et al. Jpn. J. Appl. Phys., 1998, 37: 1809
6. Yokomichi H, Hayashi T. Appl. Phys. Lett., 1998, 72: 2704
7. Yang H, Tweet D J, Ma Y, et al. Appl. Phys. Lett., 1998, 73: 1514
8. Ning Zhaoyuan, Cheng Shanhua, Yang Shendong. Current Applied Physics, 2002, 2: 439-443
9. Ye C, Ning Z Y, Cheng S H, et al. Acta Phys. Sinica, 2001, 50: 784
10. Yang Sung-Hoon, Park Jeongwon, Kim Jung-Yeul, et al. Microchemical Journal, 1999, 63: 161-167
11. Yi J W, Lee Y H, Frarouk B. Thin Solid Films, 2000, 374: 103-108
12. Shi Y Y, Pan W H, Yin Z Q. Vac. Sci. Technol., 1994, 14: 35 (in Chinese)
13. Chen Z M, Wang J N. Basic Material Physics for Semiconductor Devices. Beijing: Science Press, 1999, 327-331 (in Chinese)
14. Wang X, Harris H R, Bouldin K, et al. J. Appl. Phys., 2000, 87: 621
15. Roberston J, O'Reilly E P. Phys. Rev. B, 1987, 35: 2946