Degradation- and failure mode analysis of III-V nitride devices

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2007, Pages 284-287

  Tharian, Joy ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 39749192637     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2007.4378102     Document Type: Conference Paper

References (14)

1. S. Yoshida, N.Ikeda et al, Mater. Res.Soc.Symp. Proc. Vol. 892, Materials research society, 2006
2. Fred Schubert, J.K.Kim, Science, Vol. 308, no. 5726, pp. 1263 - 1264, May 2005.
3. Y.B.Hahn, R.J.Choi et. al., J. Appl. Phys. Vol. 92, 3/ 2002
4. L.Sugiura, J. Appl. Phys.,81, 1633 (1997)
5. T.Sugahara, H.Sato, M.Hao et. al., Jpn. J. Appl. Phys., 37, L398 (1998)
6. A.Vertikov, I.Ozden, A.V.Nurmikko, J. Appl. Phys., 86, 4697 (1999)
7. I.Akasaki, K.Hiramatsu, H.Amano, Memoirs of the faculty of engineering, Nagoya university, 43, 147 (1991)
8. Y.Chen, T. Takeucki, H.Amano, I.Akasaki, Appl. Phys. Lett. 72, 710 (1998)
9. D.Cherns, S.J.Henley and F.A.Ponce, appl. Phys. Lett. 78, 2691 (2001)
10. T.Hino, S.Tomiya, T.Miyajima et al., Appl. Phys.Lett., 76, 3421-3423, (2000)
11. J.W.P.Hsu, J.f.Manfra et al. Applied Physics Letters, 78/12, 1685-87, (2001)
12. B.Jahnen, M.Albrecht, W.Dorsch et.al., MRS Internet J.Nitride Semicon.Res., 3, 39 (1998)
13. T. Egawa, T. Jimbo and M. Umeno, J. Appl. Phys. 82 (1997), pp. 5816-5821
14. X.A.Cao, S.D.Arthur et. al., GE Global research, GRC266, (Nov. 2003)