Polarization engineering on buffer layer in GaN-based heterojunction FETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 2, 2008, Pages 483-488

  Inoue, Takashi ^a   Nakayama, Tatsuo ^a   Ando, Yuji ^a   Kosaki, Masayoshi ^b   Miwa, Hiroshi ^b   Hirata, Koji ^b   Uemura, Toshiya ^b   Miyamoto, Hironobu ^a  

^a NEC CORPORATION   (Japan)

^b Toyoda Gosei Co Ltd   (Japan)

Author keywords

AlGaN GaN heterojunction field effect transistor (HJFET); Breakdown characteristics; Carrier confinement; Content graded AlGaN buffer layer; Enhancement mode; Pinched off; Polarization induced charge; Short channel effect

Indexed keywords

BUFFER LAYERS; CONDUCTION BANDS; ELECTRIC BREAKDOWN OF SOLIDS; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS;

CARRIER CONFINEMENT; ENHANCEMENT MODE; HETEROJUNCTION FIELD EFFECT TRANSISTOR; PINCHED-OFF; POLARIZATION-INDUCED CHARGE; SHORT-CHANNEL EFFECT;

FIELD EFFECT TRANSISTORS;

EID: 39749114574     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.912367     Document Type: Article

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