Effect of thickness and porous structure of SiC layers on the spectral response of the Pd/SiC-pSi Schottky photodiodes

Optics Communications

Volumn 281, Issue 8, 2008, Pages 2126-2131

  Boukezzata, A ^a   Nezzal, G ^a   Keffous, A ^b   Bourenane, K ^b   Kerdja, T ^c   Kechouane, M ^a   Menari, H ^b  

^a UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

^b L'Unite de Developpement de la Technologie du Silicium   (Algeria)

^c CENTRE DE DÉVELOPPEMENT DES TECHNOLOGIES AVANCÉES   (Algeria)

Author keywords

Porous silicon carbide; Pulsed laser deposition; Silicon carbide film; Spectral response

Indexed keywords

FILM THICKNESS; PULSED LASER DEPOSITION; SENSITIVITY ANALYSIS; SILICON CARBIDE;

POROUS-SILICON CARBIDE; SILICON CARBIDE FILMS;

POROUS MATERIALS;

EID: 39749104724     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2007.12.064     Document Type: Article

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