Silicon Carbide Ultraviolet Photodetectors and Their Application in Ecological Monitoring

Physica Status Solidi (A) Applied Research

Volumn 185, Issue 1, 2001, Pages 153-158

  Sankin, V I ^a   Chelibanov, V P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141754758     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200105)185:1<153::AID-PSSA153>3.0.CO;2-Z     Document Type: Article

References (14)

1. L. W. AUKERMAN, H. G. GORTON, R. K. WILLARDSON, and V. E. MAJOR, Silicon Carbide - A High Temperature Semiconductor, Eds. J. R. O'CONNOR and J. SMILTENS, Pergamon Press, Oxford 1960 (p. 388).
2. W. J. CHOYKE and L. PATRICK, Phys. Rev. 172, 769 (1968).
3. R. B. CAMPHELL and HUNG CHIANG, Solid State Electron. 10, 949 (1967).
4. G. N. VIOLINA and G. P. KHOLUYANOV, Radiotekh. Elektron. (Russia) 2, 2034 (1966).
5. V. I. SANKIN, Sov. Phys. - Solid State 17, 1191 (1975).
6. G. B. DUHROVSKII and V. I. SANKIN, Sov. Phys. - Solid State 17, 1847 (1975).
7. R. G. VERENCHIKOVA, V. I. SANKIN, and E. I. RADOVANOVA, Sov. Phys. - Semicond. 17, 1123 (1983).
8. F. I. DALIDCHIK, Sov. Phys. - JETP 47, 247 (1978).
9. V. I. SANKIN, R. G. VERENCHIKOVA, and YU. A. VODAKOV, Sov. Phys. - Semicond. 16, 850 (1982).
10. B. E. WHEELER, Solid State Commun. 4, 173 (1966).
11. P. A. GLASOW, Proc. 1st Internat. Conf. Amorphous und Crystalline Silicon Carbide and Related Materials, Washington, DC, 1987, Eds. G. L. HARRIS and C. Y. W. YANG, Springer Proc. Physics, Vol. 34, Springer-Verlag, Berlin 1989 (p. 1).
12. A. O. KONSTANTINOV, D. P. LITVIN, and V. I. SANKIN, Sov. Tech. - Phys. Lett. 7, 572 (1981).
13. V. I. SANKIN, YU. A. VODAKOV, and D. P. LITVIN, Sov. Phys. - Semicond. 18, 1339 (1984).
14. L. KONOPELKO, I. NEKHLIOUDOV, and V. P. CHELIBANOV, Metrologiya (Russia) 34, 97 (1997).