Vapor phase growth and optical properties of single-crystalline SnO2 nanobelts

Materials Research Bulletin

Volumn 43, Issue 4, 2008, Pages 836-842

  Gao, Tao ^a   Wang, Taihong ^b  

^a UNIVERSITY OF OSLO   (Norway)

^b HUNAN UNIVERSITY   (China)

Author keywords

A. Nanostructures; A. Oxides; B. Vapor deposition; C. Electron microscopy; D. Optical properties

Indexed keywords

BAND STRUCTURE; ELECTRON MICROSCOPY; PHASE STRUCTURE; RAMAN SCATTERING; SINGLE CRYSTALS; THERMAL EVAPORATION; TIN OXIDES; VAPOR DEPOSITION;

EMISSION BANDS; VAPOR PHASE GROWTH;

NANOBELTS;

EID: 39549101211     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2007.05.004     Document Type: Article

References (30)

1. Mazzone A.M. J. Phys.: Condens. Matter 14 (2002) 12819
2. Kolmakov A., Zhang Y., Cheng G., and Moskovits M. Adv. Mater. 15 (2003) 997
3. Liu Z., Zhang D., Han S., Li C., Tang T., Jin W., Liu X., Lei B., and Zhou C. Adv. Mater. 15 (2003) 1754
4. Pan Z.W., Dai Z.R., and Wang Z.L. Science 291 (2001) 1947
5. Dai Z.R., Pan Z.W., and Wang Z.L. Solid State Commun. 118 (2001) 351
6. Hu J.Q., Ma X.L., Shang N.G., Xie Z.Y., Wong N.B., Lee C.S., and Lee S.T. J. Phys. Chem. B 106 (2002) 3823
7. Ma X.L., Li Y., and Zhu Y.L. Chem. Phys. Lett. 376 (2003) 794
8. Hu J.Q., Bando Y., and Golberg D. Chem. Phys. Lett. 372 (2003) 758
9. Sun S.H., Meng G.W., Zhang G.X., Gao T., Geng B.Y., Zhang L.D., and Zuo J. Chem. Phys. Lett. 376 (2003) 103
10. Sun S.H., Meng G.W., Zhang M.G., An X.H., Wu G.S., and Zhang L.D. J. Phys. D: Appl. Phys. 37 (2004) 409
11. Peng X.S., Zhang L.D., Meng G.W., Tian Y.T., Lin Y., Geng B.Y., and Sun S.H. J. Appl. Phys. 93 (2003) 1760
12. Zhang J., Jiang F., and Zhang L. J. Phys. D: Appl. Phys. 36 (2003) L21
13. Comini E., Faglia G., Sberveglieri G., Pan Z., and Wang Z.L. Appl. Phys. Lett. 81 (2002) 1869
14. Law M., Kind H., Messer B., Kim F., and Yang P. Angew. Chem. Int. Ed. 41 (2002) 2405
15. Arnold M.S., Avouris P., Pan Z.W., and Wang Z.L. J. Phys. Chem. B 107 (2003) 659
16. Law M., Sirbuly D.J., Johnson J.C., Goldberger J., Saykally R.J., and Yang P. Science 305 (2004) 1269
17. Wang Z., and Pan Z. Adv. Mater. 14 (2002) 1029
18. Ding Y., Gao P.X., and Wang Z.L. J. Am. Chem. Soc. 126 (2004) 2066
19. Gao T., and Wang T.H. J. Phys. Chem. B 108 (2004) 20045
20. Gao T., and Wang T.H. J. Cryst. Growth 290 (2006) 660
21. Wang Z.L. Annu. Rev. Phys. Chem. 55 (2004) 159
22. Baxter J.B., Wu F., and Aydil E.S. Appl. Phys. Lett. 83 (2003) 3797
23. Abello L., Bochu B., Gaskov A., Koudryavtseva S., Lucazeau G., and Roumyantseva M. J. Solid State Chem. 135 (1998) 78
24. Zuo J., Xu C., Liu X., Wang C., Wang C., Hu Y., and Qian Y. J. Appl. Phys. 75 (1994) 1835
25. Diéguez A., Rodríguez A.R., Vilà A., and Morante J.R. J. Appl. Phys. 90 (2001) 1550
26. Liu Y.K., Zheng C.L., Wang W.Z., Yin C.R., and Wang G.H. Adv. Mater. 13 (2001) 1883
27. Kim T.W., Lee D.U., and Yoon Y.S. J. Appl. Phys. 88 (2000) 3759
28. Gu F., Wang S.F., Song C.F., Lü M.K., Qi Y.X., Zhou G.J., Xu D., and Yuan D.R. Chem. Phys. Lett. 372 (2003) 451
29. Jarzebski Z.M. Oxide Semiconductors (1973), Oxford, Pergamon
30. Lin B., Fu Z., and Jia Y. Appl. Phys. Lett. 79 (2001) 943