Germanium-On-Nothing (GeON): An innovative technology for ultrathin Ge film integration

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 450-453

  Batail, E ^a,c   Monfray, S ^a   Rideau, D ^a   Szczap, M ^a   Loubet, N ^a   Skotnicki, T ^a   Tabone, C ^b   Hartmann, J M ^b   Borel, S ^b   Rabille, G ^b   Damlencourt, J F ^b   Vincent, B ^b   Previtali, B ^b   Clavelier, L ^b   Bescond, M ^c   Ghibaudo, G ^c  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC INSULATORS; ELECTROSTATIC DEVICES; GERMANIUM; ULTRATHIN FILMS;

GERMANIUM-ON-NOTHING (GEON); QUANTUM CONFINEMENT MODEL;

CMOS INTEGRATED CIRCUITS;

EID: 39549097298     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430975     Document Type: Conference Paper

References (8)

1. O.Weber et al., "Strained Si and Ge MOSFETs with High-K/Metal Gate Stack for High Mobility Dual Channel CMOS", IEDM Tech. Dig., pp143-146 (2005).
2. P.Zimmerman et al, "High performance Ge pMOS devices using a Sicompatible process flow", IEDM Tech. Dig., pp655-658 (2006).
3. M.Jurczak et al., "Silicon-On-Nothing (SON) - an Innovative Process for Advanced CMOS", IEEE Trans. Electron Devices,vol. 47, pp2179-2187 (2000).
4. S.Monfray et al. "SON (Silicon-On-Nothing) technological CMOS Platform: Highly performant devices and SRAM cells", IEDM Tech. Dig., pp635-638 (2004).
5. T.Tezuka, N.Sugiyama, S.Takagi, "Fabrication of strained Si on an ultrathin SiGe-On-Insulator virtual substrate with a high-Ge fraction", Appl. Phys. Lett., vol. 79, pp1798-1800 ( 2001).
6. B.Vincent et al., "Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modeling study", Semicond. Sci. Technol., vol.22, pp237-244 (2007).
7. x alloys modeled with a first principles-optimized full-zone k.p method", Phys. Rev. B, vol 74, 195208 (2006).
8. T.Krishnamohan, "Low Defect Ultra-thin Fully Strained-Ge MOSFET on Relaxed Si with High Mobility and Low Band-To-Band-Tunneling (BTBT)", Symp. VLSI Tech., pp82-83 (2005).