Optimisation of N-channel trench MOS for power applications

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 388-391

  Hueting, R J E ^a   Hurkx, G A M ^a   Hijzen, E A ^a   Hodgskiss, S W ^b   Gajda, M ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ECONOMIC AND SOCIAL EFFECTS; SOLID STATE DEVICES;

DEVICE GEOMETRIES; DOWN-SCALING; HIGH-VOLTAGES; LOW-VOLTAGE; ON-RESISTANCE; OPTIMISATIONS; POWER APPLICATIONS; VOLTAGE RANGES;

SEMICONDUCTOR JUNCTIONS;

EID: 0005415615     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194796     Document Type: Conference Paper

References (8)

1. B.J. Baliga, Modern Power Devices, Krieger Publishing Company, Malabar, Florida, 1992.
2. A. Osawa et al., "2.5 V-Driven Nch 3rd Generation Trench
3. R. Sodhi et al., "High-Density Ultra-low Rdson 30 Volt NChannel Trench FETs for DC/DC Converter Applications", Proc. of ISPSD, Toronto, 1999, pp. 307-310.
4. R.K. Williams et al. "A 1 Million-Cell 2.0 m 30-V TrenchFET Utilizing 32 Mcell/in2 Density with Distributed Voltage Clamping", Proc. of IEDM, San Francisco, 1997, pp. 363-366.
5. C. Bulucea and R. Rossen. "Trench DMOS Transistor Technology for High-Current (100 A range) Switching", Solid-State Electronics, (34)5, pp. 493-507, 1991.
6. B.J. Baliga. "MOS Devices for Power Electronic Applications", Proc. of ESSDERC, Bordeaux, 1998, pp. 81-85.
7. MEDICI, Two dimensional device simulation program, AVANT! Corp., version 4.0, 1999.
8. J. Evans and G. Amaratunga, "The behavior of Very High Current Density Power MOSFET's", IEEE Trans. Electron Devices, (44)7, pp. 1148-1153, 1997.