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Volumn 25, Issue 8, 2004, Pages 547-549

Low-temperature power device: A new poly-si high-voltage LDMOS with excimer laser crystallization

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; EXCIMER LASERS; GATES (TRANSISTOR); LOW TEMPERATURE PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILM TRANSISTORS;

EID: 3943062930     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.831590     Document Type: Article
Times cited : (8)

References (12)
  • 1
    • 0021291351 scopus 로고
    • High-voltage polycrystalline-silicon TFT for addressing electroluminescent devices
    • T. Ungami and B. Tsujiyama, "High-voltage polycrystalline-silicon TFT for addressing electroluminescent devices," in SID Tech. Digest, 1982, pp. 117-121.
    • (1982) SID Tech. Digest , pp. 117-121
    • Ungami, T.1    Tsujiyama, B.2
  • 2
    • 3943074936 scopus 로고
    • Page-wide high-voltage polysilicon TFT array for electronic printing
    • T. C. Chuang, I. W. Wu, T. Y. Huang, and A. Chiang, "Page-wide high-voltage polysilicon TFT array for electronic printing," SID Tech. Dig., pp. 508-511, 1990.
    • (1990) SID Tech. Dig. , pp. 508-511
    • CT.Y., T.C.1    Wu, I.W.2    Huang, T.Y.3    Chiang, A.4
  • 4
    • 0034449647 scopus 로고    scopus 로고
    • A review of RESURF technology
    • May
    • A. W. Ludikhuize, "A review of RESURF technology," in Proc. ISPSD, May 2000, pp. 11-17.
    • (2000) Proc. ISPSD , pp. 11-17
    • Ludikhuize, A.W.1
  • 5
    • 0036757862 scopus 로고    scopus 로고
    • An investigation of bias temperature instability in hydrogenated low-temperature polycrystalline silicon thin film transistors
    • Sept
    • C. W. Lin, C. H. Tseng, T. K. Chang, Y. H. Chang, F. T. Chu, C. W. Lin, W. T. Wang, and H. C. Cheng, "An investigation of bias temperature instability in hydrogenated low-temperature polycrystalline silicon thin film transistors," Jpn. J. Appl. Phys., vol. 41, pp. 5517-5522, Sept. 2002.
    • (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 5517-5522
    • Lin, C.W.1    Tseng, C.H.2    Chang, T.K.3    Chang, Y.H.4    Chu, F.T.5    Lin, C.W.6    Wang, W.T.7    Cheng, H.C.8
  • 6
    • 0028374752 scopus 로고
    • Temperature dependence of the anomalous leakage current in polysilicon-on-insulator MOSFETs
    • Feb
    • S. S. Bhattacharya, S. K. Banerjee, B.-Y. Nguyen, and P. J. Tobin, "Temperature dependence of the anomalous leakage current in polysilicon-on-insulator MOSFETs," IEEE Trans. Electron Devices, vol. 41, pp. 221-227, Feb. 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 221-227
    • Bhattacharya, S.S.1    Banerjee, S.K.2    Nguyen, B.-Y.3    Tobin, P.J.4
  • 7
    • 0023851207 scopus 로고
    • Characteristics of offset-structure polycrystalline-silicon thin-film transistors
    • Jan
    • K. Tanaka, H. Arai, and S. Kohda, "Characteristics of offset-structure polycrystalline-silicon thin-film transistors," IEEE Electron Device Lett., vol. 9, pp. 23-25, Jan. 1988.
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 23-25
    • Tanaka, K.1    Arai, H.2    Kohda, S.3
  • 8
    • 0026140319 scopus 로고
    • Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation
    • Apr
    • I.-W. Wu, T. Y. Huang, W. B. Jackson, A. G. Lewis, and A. Chiang, "Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation," IEEE Electron Device Lett., vol. 12, pp. 181-183, Apr. 1991.
    • (1991) IEEE Electron Device Lett. , vol.12 , pp. 181-183
    • Wu, I.-W.1    Huang, T.Y.2    Jackson, W.B.3    Lewis, A.G.4    Chiang, A.5
  • 10
    • 0033352172 scopus 로고    scopus 로고
    • Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low-temperature polysilicon TFTs
    • C. W. Lin, M. Z. Yuang, C. C. Yeh, L. J. Cheng, T. Y. Huang, H. C. Cheng, H. C. Lin, T. S. Chao, and C. Y. Chang, "Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low-temperature polysilicon TFTs," IEDM Tech. Dig., pp. 305-308, 1999.
    • (1999) IEDM Tech. Dig. , pp. 305-308
    • Lin, C.W.1    Yuang, M.Z.2    Yeh, C.C.3    Cheng, L.J.4    Huang, T.Y.5    Cheng, H.C.6    Lin, H.C.7    Chao, T.S.8    Chang, C.Y.9
  • 11
    • 0035456577 scopus 로고    scopus 로고
    • Extraction of trap states at the oxide-silicon interface and grain boundary for polycrystalline silicon thin-film transistors
    • Sept
    • M. Kimura, R. Nozawa, S. Inoue, T. Sfimoda, B. O.-K. Lui, S. W.-B. Tam, and P. Migliorato, "Extraction of trap states at the oxide-silicon interface and grain boundary for polycrystalline silicon thin-film transistors," Jpn. J. Appl. Phys., vol. 40, pp. 5227-5236, Sept. 2001.
    • (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 5227-5236
    • Kimura, M.1    Nozawa, R.2    Inoue, S.3    Sfimoda, T.4    Lui, B.O.-K.5    Tam, S.W.-B.6    Migliorato, P.7
  • 12
    • 0031097284 scopus 로고    scopus 로고
    • Polycrystalline silicon thin-film transistors: A continuous evolving technology
    • G. Fortunato, "Polycrystalline silicon thin-film transistors: A continuous evolving technology," Thin Solid Films, vol. 296, pp.
    • (1997) Thin Solid Films , vol.296 , pp. 82-90
    • Fortunato, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.