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Volumn 83, Issue 23, 2003, Pages 4746-4748
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Electroluminescence from Tm-doped GaN deposited by radio-frequency planar magnetron sputtering
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON PROBE MICROANALYSIS;
IMPACT EXCITATION;
LIGHT EMITTERS;
LUMINESCENT CENTERS;
CONCENTRATION (PROCESS);
CURRENT VOLTAGE CHARACTERISTICS;
DOPING (ADDITIVES);
ELECTROLUMINESCENCE;
GROUND STATE;
GROWTH (MATERIALS);
INFRARED RADIATION;
MAGNETRON SPUTTERING;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL FIBERS;
OPTOELECTRONIC DEVICES;
PHOTOLUMINESCENCE;
SPUTTER DEPOSITION;
THIN FILMS;
THULIUM;
VOLTAGE MEASUREMENT;
GALLIUM NITRIDE;
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EID: 0346910479
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1627471 Document Type: Article |
Times cited : (38)
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References (14)
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