SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 81-86

Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia

(7) Hashimoto, Tadao a Fujito, Kenji a Wu, Feng a Haskell, Benjamin A a Fini, Paul T a Speck, James S a Nakamura, Shuji a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; MORPHOLOGY; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SOLUBILITY; SOLUTIONS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

AMMONOTHERMAL GROWTH; FLUID TRANSPORT; OPTICAL TRANSITION; WEIGHT LOSS METHOD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 23844454552 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (12)

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- Hashimoto, T.¹ Fujito, K.² Haskell, B.A.³ Fini, P.T.⁴ Speck, J.S.⁵ Nakamura, S.⁶

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