A 205/275GHz fT/fmax airgap isolated 0.13 m BiCMOS technology featuring on-chip high quality passives

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2006, Pages

  Van Huylenbroeck, S ^a   Choi, L J ^a   Sibaja Hernandez, A ^b   Piontek, A ^a   Linien, D ^a   Dehan, M ^a   Dupuis, O ^a   Carchon, G ^a   Vleugels, F ^a   Kunnen, E ^a   Leray, P ^a   Devriendt, K ^a   Shi, X P ^a   Loo, R ^a   Hijzen, E ^c   Decoutere, S ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

BiCMOS integrated circuits; BiCMOS process technology; Current mode logic; Heterojunction bipolar transistors; Silicon germanium

Indexed keywords

BICMOS TECHNOLOGY; BIPOLAR INTEGRATED CIRCUITS; GATE DIELECTRICS; LOW NOISE AMPLIFIERS; SILICON ALLOYS;

BICMOS PROCESS TECHNOLOGY; CURRENT MODE LOGIC; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 39049127315     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2006.311158     Document Type: Conference Paper

References (4)

1. S. Van Huylenbroeck, et al., Lateral and Vertical Scaling of a QSA HBT for a 0.13 m 200GHz SiGe:C BiCMOS Technology, BCTM, pp 229-232, 2004.
2. L. J. Choi, et al., A Novel Deep Trench Isolation featuring Airgaps for a High-Speed 0.13 m SiGe:C BiCMOS Technology, VLSI-TSA, pp 88-89, 2006.
3. G.A.M. Hurkx, et al., RF figures-of-merit for process optimization, IEEE Transactions on Electron Devices, volume 51, pp. 2121-2128, 2004.
4. D. Linten, et al. "A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS" IEEE Journal of Solid-State Circuits Special Issue on the 2004 European Solid State Circuits Conference (ESSCIRC), volume 40, no. 7, pp. 1434-1442, 2005.