A novel deep trench isolation featuring airgaps for a high-speed 0.13μm SiGerC BiCMOS technology

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2006, Pages 88-89

  Choi, L J ^a   Kunnen, E ^a   Van Huylenbroeck, S ^a   Piontek, A ^a   Sibaja Hornandez, A ^b   Vleugels, F ^a   Dupont, T ^a   Leray, P ^a   Devriendi, K ^a   Shi, X P ^a   Loo, R ^a   Vanhaelemeersch, S ^a   Deoouiere, S ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

AIRGAPS; DEEP TRENCH ISOLATION; PERIPHERAL SUBSTRATE PARASITICS;

BICMOS TECHNOLOGY;

EID: 34250345267     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2006.251079     Document Type: Conference Paper

References (6)

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3. Bock et al., IEDM Tech. Dig., 2004, pp. 255-258
4. Parthasarathy et al., IEDM Tech. Dig., 2002, pp. 459-462
5. Van Huylenbroeck et al., Proc. BCTM, 2004, pp.229-232
6. Hurkx et al., IEEE Trans, on Electron Devices, 2004, vol. 51, pp. 2121-2128