Evidence for non-equilibrium base transport IN Si and SiGe bipolar transistors at cryogenic temperatures

Solid-State Electronics

Volumn 39, Issue 6, 1996, Pages 785-789

  Richey, D M ^a   Joseph, A J ^a   Cressler, J D ^a   Jaeger, R C ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; DIFFUSION IN SOLIDS; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; TRANSCONDUCTANCE;

CARRIER DIFFUSIVITY; COLLECTOR CURRENT; CRYOGENIC TEMPERATURES; DRIFT DIFFUSION THEORY; NONEQUILIBRIUM TRANSPORT THEORY;

BIPOLAR TRANSISTORS;

EID: 0030167483     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00223-5     Document Type: Article

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