Mechanical stability of poly-Si TFT on metal foil

Solid-State Electronics

Volumn 52, Issue 3, 2008, Pages 473-477

  Cheon, Jun Hyuk ^a   Bae, Jung Ho ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Mechanical stability; Metal foil; Metal induced crystallization with a nitride cap layer (MICC); Poly Si thin film transistor (TFT)

Indexed keywords

CARRIER MOBILITY; CRYSTALLIZATION; ELECTRIC PROPERTIES; METAL FOIL; POLYSILICON; TENSILE STRAIN; THIN FILM TRANSISTORS;

BENDING RADIUS; METAL INDUCED CRYSTALLIZATION; NITRIDE CAP LAYER; POLYSILICON THIN FILM TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 38949171392     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.019     Document Type: Article

References (10)

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