Influence of thickness and porous structure of SiC layers on the electrical properties of Pt/SiC-pSi and Pd/SiC-pSi Schottky diodes for gas sensing purposes

Sensors and Actuators, B: Chemical

Volumn 129, Issue 2, 2008, Pages 612-620

  Bourenane, Karima ^a   Keffous, Aissa ^a   Nezzal, Ghania ^b   Bourenane, Ahmed ^c   Boukennous, Yacine ^a   Boukezzata, Assia ^b  

^a L'Unite de Developpement de la Technologie du Silicium   (Algeria)

^b UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

^c NUCLEAR RESEARCH CENTRE OF BIRINE   (Algeria)

Author keywords

Gas sensors; Palladium; Platinum; Schottky diodes; Silicon carbide

Indexed keywords

CHEMICAL SENSORS; CURRENT VOLTAGE CHARACTERISTICS; POROUS MATERIALS; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES;

CRYOSTAT CHAMBER; POROUS SURFACE STRUCTURE; SENSOR CAPACITANCE; THERMAL EMISSION THEORY;

SILICON CARBIDE;

EID: 38949146057     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2007.09.039     Document Type: Article

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