Site-selective spectroscopy of erbium in wide band gap semiconductors

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 1, 2008, Pages 38-42

  Kozanecki, A ^a   Glukhanyuk, V ^a   Przybylinska H ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP SEMICONDUCTORS; PHOTOLUMINESCENCE EXCITATION; POINT-CHARGE MODELS; SITE-SELECTIVE SPECTROSCOPY;

GALLIUM NITRIDE; GROUND STATE; LIGHT EXTINCTION; PHOTOLUMINESCENCE; SILICON CARBIDE;

SEMICONDUCTOR MATERIALS;

EID: 38949103020     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200776718     Document Type: Conference Paper

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