Photoluminescence properties of Er doped GaN

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 34-37

  Przybylinska H ^a   Kozanecki, A ^a   Glukhanyuk, V ^a   Jantsch, W ^b   As, D J ^c   Lischka, K ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Erbium; Gallium nitride; Photoluminescence

Indexed keywords

ERBIUM; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

EXCITATION ENERGY; OPTICAL FIBER COMMUNICATION SYSTEMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035675139     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00662-7     Document Type: Article

References (5)