|
Volumn 201, Issue 2, 2004, Pages 195-198
|
Site symmetry of erbium centers in GaN
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL LATTICES;
CRYSTAL SYMMETRY;
DOPING (ADDITIVES);
ERBIUM;
HAMILTONIANS;
ION IMPLANTATION;
OPTOELECTRONIC DEVICES;
PHOTOLUMINESCENCE;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
ZINC;
ELECTRON TRANSITIONS;
ERBIUM COMPOUNDS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
POSITIVE IONS;
SEMICONDUCTOR DOPING;
EXCITATION ENERGY;
OPTICAL FIBER COMMUNICATION;
STARK SPLITTING;
GALLIUM NITRIDE;
COORDINATION SHELLS;
EXCITATION ENERGY;
INTERSTITIAL SITES;
SITE SYMMETRY;
|
EID: 2342636423
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/pssa.200303978 Document Type: Conference Paper |
Times cited : (13)
|
References (14)
|