Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling

Journal of Electron Microscopy

Volumn 57, Issue 1, 2008, Pages 13-18

  Yoo, Jung Ho ^a   Yang, Jun Mo ^a   Ulugbek, Shaislamov ^a,e   Ahn, Chi Won ^a   Hwang, Wook Jung ^a   Park, Joong Keun ^b   Park, Chul Min ^c   Hong, Seung Bum ^c   Kim, Joong Jung ^d   Shindo, Daisuke ^d  

^a National Nano Fab Center (NNFC)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d TOHOKU UNIVERSITY   (Japan)

^e Kumoh National Institute of Technology   (South Korea)

Author keywords

Backside ion milling; Electron energy loss spectroscopy; Electron holography; Focused ion beam; P n junction; Quantitative analysis of 2D dopant profile

Indexed keywords

ARTICLE; COMPUTER ASSISTED DIAGNOSIS; ELECTRON MICROSCOPY; HOLOGRAPHY; INSTRUMENTATION; LABORATORY DIAGNOSIS; METHODOLOGY; SURFACE PROPERTY;

HOLOGRAPHY; IMAGE INTERPRETATION, COMPUTER-ASSISTED; MICROSCOPY, ELECTRON; SPECIMEN HANDLING; SURFACE PROPERTIES;

DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON HOLOGRAPHY; ELECTRON SCATTERING; ELECTRONS; ENERGY DISSIPATION; IONS; MILLING (MACHINING); SEMICONDUCTOR JUNCTIONS;

BACKSIDE ION MILLING; DOPANT PROFILE; DOPANT PROFILING; ELECTRON ENERGY-LOSS SPECTROSCOPIES; FOCUSED IONS BEAMS; ION MILLING; MILLING METHODS; P-N JUNCTION; QUANTITATIVE ANALYSE OF 2D DOPANT PROFILE; TWO-DIMENSIONAL;

FOCUSED ION BEAMS;

EID: 38849205467     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfm037     Document Type: Article

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