Low refraction properties of F-doped SiOC:H thin films prepared by PECVD

Thin Solid Films

Volumn 516, Issue 7, 2008, Pages 1410-1413

  Yoon, S G ^a   Kang, S M ^a   Jung, W S ^a   Kim, H ^a   Kim, S W ^b   Yoon, D H ^a  

^a Sungkyunkwan University   (South Korea)

^b Kumoh National Institute of Technology   (South Korea)

Author keywords

Chemical vapor deposition; F doped SiOC:H; Refractive index

Indexed keywords

FLOW OF GASES; FLUORINE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICON COMPOUNDS;

LOW REFRACTION PROPERTIES; SUBSTRATE TEMPERATURES;

THIN FILMS;

EID: 38849149725     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.03.093     Document Type: Article

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