Quantum transport in one-dimensional GaAs hole systems

International Journal of Nanotechnology

Volumn 5, Issue 2-3, 2008, Pages 318-330

  Hamilton, A R ^a   Klochan, O ^a   Danneau, R ^a,d   Clarke, W R ^a   Ho, L H ^a   Micolich, A P ^a   Simmons, M Y ^a   Pepper, M ^b,e   Ritchie, D A ^b,e   Muraki, K ^c   Hirayama, Y ^c,f  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories

^d AALTO UNIVERSITY   (Finland)

^e UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^f TOHOKU UNIVERSITY   (Japan)

Author keywords

Conductance quantisation; Gallium arsenide; Mesoscopic; Quantum point contact; Quantum wire; Spin orbit

Indexed keywords

BIAS CURRENTS; HOLE MOBILITY; ONE DIMENSIONAL; SEMICONDUCTING GALLIUM COMPOUNDS; SPIN DYNAMICS;

CONDUCTANCE QUANTISATION; ELECTRON QUANTUM; GALLIUM ARSENIDE; QUANTUM POINT CONTACT;

SEMICONDUCTOR QUANTUM WIRES;

EID: 38849140239     PISSN: 14757435     EISSN: None     Source Type: Journal    
DOI: 10.1504/IJNT.2008.016921     Document Type: Article

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