Closely separated one-dimensional wires: Coupled ballistic conduction, wave function hybridization and compressibility investigations

Physica B: Condensed Matter

Volumn 249-251, Issue , 1998, Pages 157-161

  Castleton, I M ^a   Davies, A G ^a   Hamilton, A R ^a   Frost, J E F ^a   Simmons, M Y ^a   Ritchie, D A ^a   Pepper, M ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Coupled quantum wires; One dimensional

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

COUPLED BALLISTIC CONDUCTION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032089507     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)00089-1     Document Type: Article

References (18)

1. T.J. Thornton et al., Phys. Rev. Lett. 56 (1986) 1198; K.-F. Berggren et al., Phys. Rev. Lett. 57 (1986) 1769.
2. T.J. Thornton et al., Phys. Rev. Lett. 56 (1986) 1198; K.-F. Berggren et al., Phys. Rev. Lett. 57 (1986) 1769.
3. B.J. van Wees et al., Phys. Rev. Lett. 60 (1988) 848; D.A. Wharam et al., J. Phys. C 21 (1988) L209.
4. B.J. van Wees et al., Phys. Rev. Lett. 60 (1988) 848; D.A. Wharam et al., J. Phys. C 21 (1988) L209.
5. For review see, J.P. Eisenstein, in: D. Heiman (Ed.), High Magnetic Fields in Semiconductor Physics, World Scientific, Singapore, 1995, p. 78 and references therein.
6. see, for example, T. Kimura et al., Phys. Rev. B 49 (1994) 16852; ibid B 51 (1995) 13860.
7. see, for example, T. Kimura et al., Phys. Rev. B 49 (1994) 16852; ibid B 51 (1995) 13860.
8. M. Okuda, J. Appl. Phys. 78 (1995) 1039 and references therein.
9. C.G. Smith et al., J. Phys. Condens. Mat. 1 (1989) 6763; P.J. Simpson et al., Appl. Phys. Lett. 63 (1993) 3193.
10. C.G. Smith et al., J. Phys. Condens. Mat. 1 (1989) 6763; P.J. Simpson et al., Appl. Phys. Lett. 63 (1993) 3193.
11. Two-terminal measurements of single ID channels require the elimination of the 2D series contribution to obtain the correct channel conductance. This is more complicated in double-layer structures but a model in which the dominant series resistance contribution originates in the ohmic contacts was the most successful for our data, and the corrected conductances are presented here. No free parameters are introduced in this analysis.
12. K.J. Thomas et al., Phys. Rev. Lett. 77 (1996) 135.
13. Y. Sun, G. Kirczenow, Phys. Rev. Lett. 72 (1994) 2450.
14. A.G. Davies et al., Phys. Rev. B 54 (1996) 17331R.
15. J.P. Eisenstein et al., Phys. Rev. Lett. 68 (1992) 674; Phys Rev. B 50 (1994) 1760.
16. J.P. Eisenstein et al., Phys. Rev. Lett. 68 (1992) 674; Phys Rev. B 50 (1994) 1760.
17. T.P. Smith et al., Phys. Rev. Lett. 59 (1987) 2802; H. Drexler et al., Phys. Rev. B 49 (1994) 14074.
18. T.P. Smith et al., Phys. Rev. Lett. 59 (1987) 2802; H. Drexler et al., Phys. Rev. B 49 (1994) 14074.