The effect of oxygen content on bonding configuration and properties of low-k organosilicate glass dielectric film

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 2-3, 2008, Pages 513-517

  Chen, Sheng Wen ^a   Liu, Chuan Pu ^a   JangJian, Shiu Ko ^b   Wang, Ying Lang ^b,c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c NATIONAL CHIAYI UNIVERSITY   (Taiwan)

Author keywords

A. Microporous materials; C. Infrared spectroscopy; D. Dielectric properties

Indexed keywords

CHEMICAL BONDS; GLASS; ORGANOMETALLICS; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; ULSI CIRCUITS;

BONDING CONFIGURATION; OXYGEN CONTENT;

DIELECTRIC FILMS;

EID: 38749148785     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.07.071     Document Type: Article

References (12)

1. Lee W.W., and Ho P.S. MRS Bull. 22 (1997) 5
2. The National Technology Roadmap for Semiconductor, SIA, San Jose, CA, 1997.
3. Grill A., and Patel V. J. Appl. Phys. 85 (1999) 3314
4. Uchida Y., Taguchi K., Sugahara S., and Matsumura M. Jpn. J. Appl. Phys. 38 (1999) 2368
5. Lucovsky G., Manitini M.J., Srivastava J.K., and Irene E.A. J. Vac. Sci. Technol. B 5 (1987) 530
6. Chou J.S., and Lee S.C. J. Appl. Phys. 77 (1995) 1805
7. Grill A., and Patel V. Appl. Phys. Lett. 79 (2001) 803
8. JangJian S.K., Liu C.P., Hwang W.S., Tseng W.T., Liu C.W., and Wang Y.L. J. Appl. Phys. 94 (2003) 732
9. Pai P.G., Chao S.S., Takagi Y., and Lucovsky G. J. Vac. Sci. Technol. A 4 (1986) 689
10. Simon I. Modern Aspects of the Vitreous Silica (1975), Gordon and Breach, New York
11. Moountsier T.W., Samuels J.A., and Swope R.S. Mater. Res. Soc. Symp. Proc. 511 (1998) 259
12. N. Matsuki, A. Matsunoshita, J.S. Lee, Y. Morisada, Y. Naito, C. Merritt, DUMIC 2000, DUMIC Conference Executive Committee, 2000, p. 151.