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Materials Science and Engineering: B

Volumn 147, Issue 2-3, 2008, Pages 200-204

Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

(8) Avella, M a Prieto, Á C a Jimenez J a Rodriguez A b Sangrador, J b Rodriguez T b Ortiz, M I c Ballesteros, C c

a UNIVERSIDAD DE VALLADOLID (Spain)

b UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

c UNIVERSIDAD CARLOS III DE MADRID (Spain)

Author keywords

Cathodoluminescence; Crystallization; LPCVD; Raman spectroscopy; SiGe nanocrystals; Transmission electron microscopy

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DANGLING BONDS; MULTILAYERS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

DANGLING BOND PASSIVATION; EMISSION BANDS; OXIDE INTERLAYER THICKNESS;

NANOCRYSTALS;

EID: 38749117912 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2007.08.016 Document Type: Article

Times cited : (14)

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