Growth by LPCVD, crystallization and characterization of SiGe nanoparticles for nanoelectronic devices

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 6, 2006, Pages 1284-1290

  Ortiz, M I ^a   Sangrador, J ^a   Rodriguez A ^a   Rodriguez T ^a   Kling, A ^b,c   Franco, N ^b   Barradas, N P ^b,c   Ballesteros, C ^d  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^d UNIVERSIDAD CARLOS III DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-SCATTERING SPECTROMETRY; LOW PRESSURE CHEMICAL VAPOUR DEPOSITION; NANOELECTRONIC DEVICES; SIGE NANOPARTICLES;

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; LIGHT SCATTERING; REFLECTOMETERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

NANOSTRUCTURED MATERIALS;

EID: 33646817757     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200566105     Document Type: Conference Paper

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