Computational simulations of pore nucleation in silicon(1 1 1)

Electrochemistry Communications

Volumn 10, Issue 2, 2008, Pages 329-334

  Jakubowicz, J ^a   Szlaferek, A ^b  

^a POZNAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b INSTITUTE OF MOLECULAR PHYSICS   (Poland)

Author keywords

Computational simulations; Electrochemical etching; Porous silicon

Indexed keywords

COMPUTER SIMULATION; CORRELATION METHODS; ELECTRIC FIELDS; ELECTROCHEMICAL ETCHING; NUCLEATION;

ATOMIC TERRACES; FLOAT ZONE; GROWTH MECHANISM;

POROUS SILICON;

EID: 38649097197     PISSN: 13882481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elecom.2007.12.023     Document Type: Article

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