New developments on FRAMs: [3D] structures and all-perovskite FETs

Materials Science and Engineering: B

Volumn 120, Issue 1-3, 2005, Pages 6-12

  Scott, J F ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Electronic ceramics; Ferroelectrics

Indexed keywords

COMPUTATIONAL GEOMETRY; DYNAMIC RANDOM ACCESS STORAGE; FIELD EFFECT TRANSISTORS; NANOTUBES; PEROVSKITE; RANDOM ACCESS STORAGE; THIN FILMS;

FERROELECTRIC GATES; FERROELECTRIC RANDOM ACCESS MEMORIES (FRAM); NANO-SCALE GEOMETRIES; SELF-TRENCHED CAPACITORS;

FERROELECTRIC DEVICES;

EID: 18944383834     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.02.047     Document Type: Conference Paper

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