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Volumn 13, Issue 1, 2008, Pages 91-97

Modeling of Busbars in High Power Neutral Point Clamped Three-Level Inverters

Author keywords

busbars; parasitic inductance; partial element equivalent circuits; switching characteristics

Indexed keywords

COMPUTER SIMULATION; ELECTRIC INVERTERS; EQUIVALENT CIRCUITS; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; SWITCHING CIRCUITS; THYRISTORS;

EID: 38549133893     PISSN: 10070214     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1007-0214(08)70015-4     Document Type: Article
Times cited : (10)

References (14)
  • 1
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    • Skibinski G L, Divan D M. Design methodology and modeling of low inductance planar bus structures. In: European Conference on Power Electronics and Applications. Brighton, England, 1993, 3: 98-105.
  • 2
    • 0036647990 scopus 로고    scopus 로고
    • Reduced layer planar busbar for voltage source inverters
    • Zare F., and Ledwich G. Reduced layer planar busbar for voltage source inverters. IEEE Transactions on Power Electronics 17 4 (2002) 508-516
    • (2002) IEEE Transactions on Power Electronics , vol.17 , Issue.4 , pp. 508-516
    • Zare, F.1    Ledwich, G.2
  • 3
    • 0036503221 scopus 로고    scopus 로고
    • Low stray inductance bus bar design and construction for good EMC performance in power electronic circuits
    • Caponet M., Profumo F., De Doncker R., and Tenconi A. Low stray inductance bus bar design and construction for good EMC performance in power electronic circuits. IEEE Transactions on Power Electronics 2 17 (2002) 225-231
    • (2002) IEEE Transactions on Power Electronics , vol.2 , Issue.17 , pp. 225-231
    • Caponet, M.1    Profumo, F.2    De Doncker, R.3    Tenconi, A.4
  • 4
    • 0035058370 scopus 로고    scopus 로고
    • Winterhalter C, Kerkman R, Schlegel D, Leggate D. The effect of circuit parasitic impedance on the performance of IGBTs in voltage source inverters. In: Proceedings of IEEE APEC. Anaheim, USA, 2001, 2: 995-1001.
  • 5
    • 85087192545 scopus 로고    scopus 로고
    • Kao W H, Lo Chi-Yuan, Basel M, Singh R. Parasitic extraction: Current state of the art and future trends. In: Proceedings of the IEEE International Symposium on Circuits and Systems. Sydney, 2001, (5): 487-490.
  • 7
    • 85188620868 scopus 로고    scopus 로고
    • Chen J Z, Yang L, Boroyevich D, Odendaal W G. Modeling and measurements of parasitic parameters for integrated power electronics modules. In: Proceedings of IEEE APEC. California, USA, 2004, 2: 522-525.
  • 8
    • 0030422451 scopus 로고    scopus 로고
    • Teulings W, Schanen J L, Roudet J. MOSFET switching behavior under influence of PCB stray inductance. In: IEEE Industry Applications Soc. Annu. Meeting. San Diego, USA, 1996: 1449-1463.
  • 9
  • 10
    • 38549181506 scopus 로고    scopus 로고
    • ABB Semiconductors AG. ABB IGCT 5SHX08F4502 Data Sheet. Switzerland, 2002.
  • 11
    • 38549138264 scopus 로고    scopus 로고
    • ABB Semiconductors AG. ABB IGCT 5SDF03D4502 Data Sheet. Switzerland, 2002.
  • 12
    • 0033153999 scopus 로고    scopus 로고
    • Characterization of power electronics system interconnect parasitics using time domain reflectometry
    • Zhu H., Hefner A., and Lai J. Characterization of power electronics system interconnect parasitics using time domain reflectometry. IEEE Trans. on Power Electronics 14 4 (1999) 622-628
    • (1999) IEEE Trans. on Power Electronics , vol.14 , Issue.4 , pp. 622-628
    • Zhu, H.1    Hefner, A.2    Lai, J.3
  • 13
    • 0034226313 scopus 로고    scopus 로고
    • Parasitic extraction methodology for insulated gate bipolar transistors
    • Trivedi M., and Shenai K. Parasitic extraction methodology for insulated gate bipolar transistors. IEEE Trans. on Power Electronics 15 4 (2000) 779-804
    • (2000) IEEE Trans. on Power Electronics , vol.15 , Issue.4 , pp. 779-804
    • Trivedi, M.1    Shenai, K.2
  • 14
    • 3242772319 scopus 로고    scopus 로고
    • The functional model of IGCTs for the circuit simulation of high voltage converters
    • Yuan L., Zhao Z., Bai H., Li C., and Li Y. The functional model of IGCTs for the circuit simulation of high voltage converters. Proceedings of the CSEE 24 6 (2004) 65-69
    • (2004) Proceedings of the CSEE , vol.24 , Issue.6 , pp. 65-69
    • Yuan, L.1    Zhao, Z.2    Bai, H.3    Li, C.4    Li, Y.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.