Passivation of Si and SiGe/Si structures with 1-octadecene monolayers

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 83-88

  Antonova, I V ^a   Gulyaev, M B ^a   Soots, R A ^a   Seleznev, V A ^a   Prinz, V Ya ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Electrical passivation; Organic monolayers; Si SiGe structures; Silicon

Indexed keywords

CHEMICAL ACTIVATION; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SURFACE TREATMENT; DEPOSITION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

ELECTRICAL PASSIVATION; OCTADECENE MONOLAYERS; ORGANIC MONOLAYERS; SILICON SURFACES; ELECTRONS AND HOLES; HIGH CONDUCTIVITY; ILLUMINATION INTENSITY; SI/SIGE; SURFACE PRETREATMENT; THIN NEAR-SURFACE LAYERS;

MONOLAYERS;

EID: 38549099052     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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