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Volumn 56, Issue 10, 2007, Pages 920-925

Influence of ICP etching damage on the brittle-fracture strength of single-crystal silicon

Author keywords

Bending test; Brittle fracture; Finite element method; Fracture mechanics; MEMS; Weibull distribution

Indexed keywords

BRITTLE STRENGTH; ETCHING DAMAGE; NOTCHING ROUGHNESS;

EID: 38549096485     PISSN: 05145163     EISSN: None     Source Type: Journal    
DOI: 10.2472/jsms.56.920     Document Type: Article
Times cited : (14)

References (11)
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    • K Ichihara, C-F. Yung, A Ayon and M. Schmidt, "An inertial sensor technology using DRIE and wafer bonding with intercinnecting capability", J. Microlelectomech. Syst Vol.84, pp.403-408 (1999).
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    • (2003) Sci. Technol , vol.B21 , Issue.6 , pp. 2530-2539
    • Li, J.1    Zhang, Q.2    Liu, A.3    Goh, W.4    Ahn, J.5    Vac, J.6
  • 9
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    • Robust SOI process without footing and its application to ultra high-performance microgyroscopes
    • J. Kim, S. Park, D. Kwak, H. Ku, W. Carr, J. Buss and D. Cho, "Robust SOI process without footing and its application to ultra high-performance microgyroscopes", Sensors and Actuators A114, pp.236-243 (2004).
    • (2004) Sensors and Actuators , vol.A114 , pp. 236-243
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.