Temperature dependent IBIC study of 4H-SiC Schottky diodes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 231, Issue 1-4, 2005, Pages 491-496

  Vittone, E ^a   Rigato, V ^b   Olivero, P ^a,d   Nava, F ^c   Manfredotti, C ^a   Logiudice, A ^a   Garino, Y ^a   Fizzotti, F ^a  

^a UNIVERSITY OF TURIN   (Italy)

^b LABORATORI NAZIONALI DI LEGNARO   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

4H SiC Schottky diodes; Ramo's theorem; Temperature dependent ion beam induced charge collection

Indexed keywords

4H-SIC SCHOTTKY DIODES; CHARGE COLLECTION EFFICIENCY (CCE); RAMO'S THEOREM; TEMPERATURE DEPENDENT ION BEAM INDUCED CHARGE COLLECTION;

DIFFUSION; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ION BEAMS; THEOREM PROVING; THERMAL EFFECTS;

SCHOTTKY BARRIER DIODES;

EID: 33644544403     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.01.105     Document Type: Conference Paper

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