Process and device simulation of a SiC floating junction Schottky barrier diode (Super-SBD)

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 921-924

  Hatakeyama, T ^a   Nishio, J ^a   Shinohe, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Anisotropy; Breakdown voltage; Device simulation; Figure of merit; Floating junction; Impact ionization coefficient; Process simulation; Schottky barrier diode

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; IONIZATION; SILICON CARBIDE;

DEVICE SIMULATION; FIGURE OF MERIT; FLOATING JUNCTION; IMPACT IONIZATION COEFFICIENT; PROCESS SIMULATION;

SCHOTTKY BARRIER DIODES;

EID: 35148879613     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.921     Document Type: Conference Paper

References (4)

1. W. Saito, I. Omura, et al., Proc. of ISPSD 2002, (2002) pp. 33-36
2. K. Adachi, I. Omura, et al. Mat. Sci. Forum vols 433-436(2003) pp 887-890
3. T. Hatakeyama, et al. Mat. Sci. Forum vols 457-460(2004) pp 673-676
4. J. F. Ziegler, J. P. Biersack and U. Littmark, Pergamon Press, New York, 1985