600 V 100 A 4H-SiC junction barrier schottky diode with guard rings termination

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 857-860

  Yamamoto, Tsuyoshi ^a   Endo, Takeshi ^a   Kato, Nobuyuki ^a   Nakamura, Hiroki ^a   Sakakibara, Toshio ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

4H SiC; 5mm size; Guard ring; JBS; P type dopant; Switching characteristic

Indexed keywords

DIODES; SCHOTTKY BARRIER DIODES;

4H-SIC; 5MM SIZE; GUARD-RINGS; P-TYPE DOPANT; SWITCHING CHARACTERISTICS;

SILICON CARBIDE;

EID: 38449087492     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.857     Document Type: Conference Paper

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