Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 80, Issue 2, 1987, Pages 307-314

  Massies, J ^a   Turco, F ^a   Saletes, A ^a   Contour, J P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000262485     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(87)90076-5     Document Type: Article

References (27)

1. Influence of Substrate Temperature on the Morphology of Al[sub x]Ga[sub 1−x]As Grown by Molecular Beam Epitaxy
2. Morphology of GaAs and AlxGa1−xAs grown by molecular beam epitaxy
3. Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures
4. Molecular beam epitaxy of In0.53Ga0.47As and InP on InP by using cracker cells and gas cells
5. Electron spectroscopy of vacuum annealing effects on surfaces of some binary and ternary III–V semiconductors
6. Study of the x-ray photoelectron spectrum of tungsten—tungsten oxide as a function of thickness of the surface oxide layer
7. Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
8. Reflection high-energy electron diffraction intensity oscillation study of Ga desorption from molecular beam epitaxially grown AlxGa1−xAs
9. Thermodynamic aspects of molecular beam epitaxy: High temperature growth in the GaAs/Ga1−xAlxAs system
10. Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements
11. Segregated AlGaAs(110) grown by molecular beam epitaxy
12. Surface orientation dependent surface kinetics and interface roughening in molecular beam epitaxial growth of III–V semiconductors: A Monte Carlo study