Influence of negative substrate bias on plasma properties and silicon film deposition rate

High Temperature Material Processes

Volumn 11, Issue 3, 2007, Pages 467-475

  Katsia, E ^a   Gkotsis, P ^a   Rapakoulias, Dimitrious E ^a  

^a UNIVERSITY OF PATRAS   (Greece)

Author keywords

Dielectric substrate; Growth rate; Negative bias

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION RATES; ENERGY DISSIPATION; GROWTH RATE; SUBSTRATES;

DIELECTRIC SUBSTRATE; NEGATIVE BIAS; SILICON FILM DEPOSITION;

SILICON;

EID: 38149006147     PISSN: 10933611     EISSN: None     Source Type: Journal    
DOI: 10.1615/HighTempMatProc.v11.i3.130     Document Type: Article

References (16)

1. J.J. Crowly, Solid State Technol. 35,94 (1992).
2. A. Shah, P. Torres, R. Tscharner, N. Wyrsch, H. Keppner,Science 285, (1999) 692.
3. B. Rech, O. Kluth, T. Repmann, T. Roschek, J. Springer, J. Müller, F. Finger, H. Stiebig, and H. Wagner, Sol. Energy Mater. Sol. Cells 74, 439(2002).
4. R. Robertson, D. Hills, H. Chatham, A. Gallagher, Appl. Phys.Lett. 43, 544. (1983).
5. A. Matsuda, K. Nomoto, Y. Tacheuchi, A. Suzuki, A. Yuuki, J. Perrin, Surf. Sci. 227, 50. (1990).
6. B. Kalache, A.I. Kosarev, R. Vanderhaghen, and P. Roca i Cabarrocas, J. Appl. Phys. 93, 1262 (2003).
7. M. Kondo, M. Fukawa, L. Guo and A. Matsuda, J. Non-Cryst. Solids 266-269, 84 (2000).
8. M. S. Feng and C. W. Liang, J. Appl. Phys. 77, 4771 (1995).
9. S. Lebib and P. Roca i Cabarrocas, J. Appl. Phys 97, 104334 (2005).
10. N. Spiliopoulos, D. Mataras, D. Rapakoulias, J. Vac. Sci. Technol. A, Vac. Surf. Films, 14, 2757 (1996).
11. Y. Yin, M.M.M. Bilek, D.R. McKenzie, Surf. and Coat. Tech., 200, 3670 (2006).
12. V. A. Godyak, R. B. Piejak, and B. M. Alexandrovich, IEEE Trans. Plasma Sci. 19, 660 (1991).
13. E. Amanatides and D. Mataras, J. Appl. Phys. 89, 1556 (2001).
14. W. Jurgensen, ,J. Appl. Phys. 64(2), 590 (1988).
15. V.L. Dalal, J. Graves, and J. Leib, Appl. Phys. Lett., 85 (8), 2004, 1413-1414.
16. V. Phelps, J. Phys. Chem. Ref. Data 19, 653(1990).