-
1
-
-
0042099114
-
-
2nd ed. New York: Cambridge Univ. Press
-
E. F. Schubert, Light Emitting Diodes, 2nd ed. New York: Cambridge Univ. Press, 2006.
-
(2006)
Light Emitting Diodes
-
-
Schubert, E.F.1
-
2
-
-
0141678466
-
Light extraction technologies for high-efficiency GaInN-LED devices
-
V. Haerle, B. Hahn, S. Kaiser, A. Weimar, D. Eisert, S. Bader, A. Ploessl, and F. Eberhard, "Light extraction technologies for high-efficiency GaInN-LED devices," Proc. SPIE, vol. 4996A, pp. 133-138, 2003.
-
(2003)
Proc. SPIE
, vol.4996 A
, pp. 133-138
-
-
Haerle, V.1
Hahn, B.2
Kaiser, S.3
Weimar, A.4
Eisert, D.5
Bader, S.6
Ploessl, A.7
Eberhard, F.8
-
3
-
-
22544464991
-
Surface texturing for wafer-bonded vertical-typed GaN/mirror/Si light-emitting diodes
-
S. H. Huang, R. H. Horng, S. C. Hsu, T. Y. Chen, and D. S.Wuu, "Surface texturing for wafer-bonded vertical-typed GaN/mirror/Si light-emitting diodes," Jpn. J. Appl. Phys., vol. 44, pp. 3028-3031, 2005.
-
(2005)
Jpn. J. Appl. Phys
, vol.44
, pp. 3028-3031
-
-
Huang, S.H.1
Horng, R.H.2
Hsu, S.C.3
Chen, T.Y.4
Wuu, D.S.5
-
4
-
-
21044445349
-
Ohmic and degradation mechanisms of Ag contacts on p-type GaN
-
J. O. Song, J. S. Kwak, Y. Park, and T. Y. Seong, "Ohmic and degradation mechanisms of Ag contacts on p-type GaN," Appl. Phys. Lett., vol. 86, p. 062104, 2005.
-
(2005)
Appl. Phys. Lett
, vol.86
, pp. 062104
-
-
Song, J.O.1
Kwak, J.S.2
Park, Y.3
Seong, T.Y.4
-
5
-
-
20444479833
-
Mechanism for ohmic contact formation of Ni/Ag contacts on p-type GaN
-
H. W. Jang and J. L. Lee, "Mechanism for ohmic contact formation of Ni/Ag contacts on p-type GaN," Appl. Phys. Lett., vol. 85, pp. 5920-5922, 2004.
-
(2004)
Appl. Phys. Lett
, vol.85
, pp. 5920-5922
-
-
Jang, H.W.1
Lee, J.L.2
-
6
-
-
31544448332
-
Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes
-
J. Y. Kim, S. I. Na, G. Y. Ha, M. K.Kwon, I. K. Park, J. H. Lim, and S. J. Park, "Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes," Appl. Phys. Lett., vol. 88, p. 043507, 2006.
-
(2006)
Appl. Phys. Lett
, vol.88
, pp. 043507
-
-
Kim, J.Y.1
Na, S.I.2
Ha, G.Y.3
Kwon, M.K.4
Park, I.K.5
Lim, J.H.6
Park, S.J.7
-
7
-
-
33947685489
-
High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light-emitting diodes
-
Mar. 1
-
H. Kim, K. H. Baik, J. Cho, J. W. Lee, S. Yoon, H. Kim, S. N. Lee, C. Sone, Y. Park, and T. Y. Seong, "High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light-emitting diodes," IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 336-338, Mar. 1, 2007.
-
(2007)
IEEE Photon. Technol. Lett
, vol.19
, Issue.5
, pp. 336-338
-
-
Kim, H.1
Baik, K.H.2
Cho, J.3
Lee, J.W.4
Yoon, S.5
Kim, H.6
Lee, S.N.7
Sone, C.8
Park, Y.9
Seong, T.Y.10
-
8
-
-
0035971873
-
Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices
-
V. Adivarahan, A. Lunev, M. A. Khan, J. Yang, G. Simin, M. S. Shur, and R. Gaska, "Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices," Appl. Phys. Lett., vol. 78, pp. 2781-2783, 2001.
-
(2001)
Appl. Phys. Lett
, vol.78
, pp. 2781-2783
-
-
Adivarahan, V.1
Lunev, A.2
Khan, M.A.3
Yang, J.4
Simin, G.5
Shur, M.S.6
Gaska, R.7
-
9
-
-
0000886283
-
Low-resistance ohmic contacts to p-GaN achieved by the oxidation of Ni/Au films
-
J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, K. K. Shih, L. C. Chen, F. R. Chen, and J. J. Kai, "Low-resistance ohmic contacts to p-GaN achieved by the oxidation of Ni/Au films," J. Appl. Phys., vol. 86, pp. 4491-4497, 1999.
-
(1999)
J. Appl. Phys
, vol.86
, pp. 4491-4497
-
-
Ho, J.K.1
Jong, C.S.2
Chiu, C.C.3
Huang, C.N.4
Shih, K.K.5
Chen, L.C.6
Chen, F.R.7
Kai, J.J.8
-
10
-
-
0002262915
-
Formation of aluminum oxynitride diffusion barriers for Ag metallization
-
Y. Wang and T. L. Alford, "Formation of aluminum oxynitride diffusion barriers for Ag metallization," Appl. Phys. Lett., vol. 74, pp. 52-54, 1999.
-
(1999)
Appl. Phys. Lett
, vol.74
, pp. 52-54
-
-
Wang, Y.1
Alford, T.L.2
|