Comparative study of epitaxial growth of Pt and Ir electrode films grown on MgO-buffered Si(100) by PLD

Applied Physics A: Materials Science and Processing

Volumn 80, Issue 1, 2005, Pages 73-76

  Chen, T L ^a   Li, X M ^a   Zhang, S ^b   Zhang, X ^b  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC OXIDES; ELECTRODE FILMS; ELECTRON ACCELERATION; SEMICONDUCTOR RESISTIVITY;

CRYSTALLINE MATERIALS; ELECTRODES; ELECTRON DIFFRACTION; FILM GROWTH; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; IRIDIUM; MAGNESIUM COMPOUNDS; MORPHOLOGY; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SATURATION (MATERIALS COMPOSITION); SCANNING ELECTRON MICROSCOPY; SILICON; SURFACES;

PLATINUM;

EID: 10644259606     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-2978-2     Document Type: Article

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