On-state characteristics of SiC power UMOSFETs on 115-μm drift layers

IEEE Electron Device Letters

Volumn 26, Issue 4, 2005, Pages 255-257

  Sui, Y ^a   Tsuji, T ^a   Cooper, Jr ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

High voltage; Power transistors; Silicon carbide; Wide bandgap

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

BLOCKING VOLTAGES; POWER TRANSISTORS; SPECIFIC-ON-RESISTANCE; WIDE BANDGAP;

MOSFET DEVICES;

EID: 17744382842     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.845495     Document Type: Article

References (11)

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