Properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  Li, Q ^a   Polyakov, A Y ^a   Skowronski, M ^a   Fanton, M A ^b   Cavalero, R C ^b   Ray, R G ^b   Weiland, B E ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP ELECTRON TRAPS; GAS PHASE; NITROGEN CONTAMINATION LEVEL; PHYSICAL VAPOR TRANSPORT (PVT);

CONTAMINATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; GRAPHITE; HYDROCARBONS; HYDROGEN; SILICON CARBIDE; STOICHIOMETRY;

CRYSTALS;

EID: 20844443825     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1923181     Document Type: Article

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