Low-noise Avalanche Photodiode in standard 0.35-μm CMOS technology

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 457-461

  Pancheri, Lucio ^a,b   Scandiuzzo, Muro ^b,c   Stoppa, David ^b   Dalla Betta, Gian Franco ^a  

^a UNIVERSITY OF TRENTO   (Italy)

^b ITC IRST   (Italy)

^c Silicon Biosystems   (Italy)

Author keywords

Avalanche Photodiodes (APDs); CMOS; Shot noise

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTROOPTICAL EFFECTS; SHOT NOISE;

ELECTROOPTICAL CHARACTERISTICS; NOISE FACTOR;

AVALANCHE PHOTODIODES;

EID: 37748999956     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.910570     Document Type: Article

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