Avalanche photodiode image sensor in standard BiCMOS technology

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2241-2243

  Biber, A ^a,c   Seitz, P ^a,b   Jackel H ^a,c  

^a CSEM   (Switzerland)

^b Elektrobit AG   (Switzerland)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BIPOLAR INTEGRATED CIRCUITS; CAMERAS; CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; GAIN MEASUREMENT; IMAGE SENSORS; PHOTODIODES; PHOTOTRANSISTORS; SOLID STATE DEVICES; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODIODE; HIGH VOLTAGE STABILIZATION CIRCUITRY; IMAGING ARRAY; PHOTOGENERATED CHARGE CARRIERS; SOLID STATE IMAGE SENSORS; STABLE DIODE GAIN;

INTEGRATED CIRCUIT TESTING;

EID: 0034315460     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877191     Document Type: Article

References (9)

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