Microwave noise modeling for InP-InGaAs HBTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 52, Issue 4, 2004, Pages 1264-1272

  Gao, Jianjun ^a   Li, Xiuping ^b   Wang, Hong ^c   Boeck, Georg ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b Yonsei University   (South Korea)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Heterojunction bipolar transistor (HBT); Noise modeling; Parameter extraction

Indexed keywords

MICROWAVE NOISE; NOISE MODELING; PARAMETER EXTRACTION;

APPROXIMATION THEORY; BANDWIDTH; CAPACITANCE; COMPUTER AIDED DESIGN; CORRELATION METHODS; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM COMPOUNDS; MATHEMATICAL MODELS; MATRIX ALGEBRA; MONOLITHIC INTEGRATED CIRCUITS; OPTIMIZATION; PARAMETER ESTIMATION; SPURIOUS SIGNAL NOISE;

MICROWAVES;

EID: 2442466814     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.825730     Document Type: Article

References (9)

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